The previous Samsung announced the Q1 quarterly earnings meeting in 2022, and Samsung officials also denied the rumors that the yield rate was not good.
Samsung said,The 5nm process has entered a mature stage and is still expanding its services. Although the yield improvement process of the 4nm process has been delayed, it has entered the predetermined yield curve. The future 3nm process is still preparing to set up a new R&D production line.
For Samsung, the 3nm node is the key to their bet on chip technology catching up with TSMC, because TSMC’s 3nm process will not use the next-generation GAA transistor technology, Samsung’s 3nm node will enable GAA technology, which is a new type of technology. Surrounding gate transistors, MBCFETs (Multi-Bridge-Channel FETs) are fabricated by using nanosheet devices, which can significantly enhance transistor performance and largely replace FinFET transistor technology.
According to Samsung, compared to the 7nm manufacturing process,The logic area efficiency of 3nm GAA technology is increased by more than 45%, the power consumption is reduced by 50%, and the performance is increased by about 35%. On paper, it is better than TSMC’s 3nm FinFET process.