Combined with CuA design + 232-layer NAND solution, it helps to greatly reduce the size of Micron’s 1Tb 3D TLC flash memory chips, while reducing production costs or improving profit margins.
Micron has not disclosed the IC area and I/O rate of the 232L 3D TLC NAND, but has hinted that the new flash will have higher performance than existing 3D NAND devices, presumably for the next generation with PCIe 5.0 interfaceSSD.
Scott DeBoer, executive vice president of products at Micron, pointed out that the company’s related flash memory devices will be equipped with in-house and third-party masters, and they will maintain close cooperation with other developers to provide appropriate support for the new flash memory.
The company has optimized R&D around industry-leading managed NAND storage, and the technology required for data center/client SSD products, and the combination of internal and external controllers has been an important part of its vertical product integration.
Doing so not only ensures proper optimization for the NAND/controller technology, but also meets its requirements to stay ahead in the industry.
The company claims that the new generation of 232-layer 3D TLC NAND has lower power consumption compared to the previous-generation process node. In addition, Micron has long focused on mobile applications and has maintained good partnerships with downstream equipment manufacturers.
Finally, given that Micron plans to start production of 232-layer 3D TLC NAND in the second half of 2022, it is expected that various end products (such as SSDs) will also be available in 2023.
